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| Ordering number:EN5263 FP502 N-Channel Silicon MOSFET Silicon Schottky Barrier Diode DC-DC Converter Applications Features * Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. Package Dimensions unit:mm 2132 [FP502] 1:Source, Anode 2:Common (Drain, Cathode) 3:Source, Anode 4Common (Drain, Cathode) 5:Gate 6:Common (Drain, Cathode) 7:Common (Drain, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Allowable Power Dissipation Storage Temperature [MOS block] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Channel Temperature [Diode block] Average Rectified Current IO 500 mA VDSS VGSS ID IDP Tch PW10s, duty cycle 1% 11 10 2 8 150 V V A A C Symbol PD PD Tstg Tc=25C, 1 unit Mounted on ceramic board (250mm2x0.8mm) 1 unit Conditions Ratings 3.5 1.5 -55 to +150 Unit W W C Electrical Characteristics at Ta=25C Parameter [MOS block] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=10.4V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=500mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1NHZ VDS=10V, f=1MHz 11 400 10 1.0 1.2 2.2 140 200 150 200 45 200 320 4.0 V A A V S m m pF pF pF Symbol Conditons Ratings min typ max Unit Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA(KT) 71096YK (KOTO) TA-0623 No.5263-1/4 FP502 Continued from preceding page. Parameter [MOS block] Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time [Diode block] Forward Voltage Reverse Recovery Time VF trr IF=500mA IF=500mA, di/dt=50A/s 0.4 20 0.45 30 V ns td(on) tr td(off) tf See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 10 25 25 20 ns ns ns ns Symbol Conditons Ratings min typ max Unit Switching Time Test Circuit Electrical Connection 1:Source, Anode 2:Common (Drain, Cathode) 3:Source, Anode 4Common (Drain, Cathode) 5:Gate 6:Common (Drain, Cathode) 7:Common (Drain, Cathode) (Top view) No.5263-2/4 FP502 No.5263-3/4 FP502 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5263-4/4 |
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